 English |
|
|
|
|
|
|
|
| BU4506AX Datasheet, PDF (2/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
| |||
| ◁ |
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4506AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all R.H. ⤠65 % ; clean and dustfree
three terminals to external
heatsink
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
- 2500 V
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
BVEBO
VCEOsust
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
IB = 1 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 3.0 A; IB = 0.75 A
IC = 3.0 A; IB = 0.75 A
IC = 0.5 A; VCE = 5 V
IC = 3 A; VCE = 5 V
MIN.
-
-
7.5
800
-
0.8
-
4.2
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
13.5 -
V
-
-
V
-
3.0
V
0.89 0.98 V
10
-
5.5 7.3
DYNAMIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Switching times (16kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
ICsat = 3.0 A; IB1 = 0.6 A; (IB2 = -1.5 A)
TYP. MAX. UNIT
3.7 4.6 µs
300 450 ns
+ 50v
100-200R
Horizontal
Oscilloscope
Vertical
100R
1R
6V
30-60 Hz
Fig.1. Test circuit for VCEOsust.
IC / mA
250
200
100
0
VCE / V
min
VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
2 Measured with half sine-wave voltage (curve tracer).
July 1999
2
Rev 1.000
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese