BU2525DW Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2525DW
VCESAT / V
10
BU2525A
Tj = 25 C
Tj = 125 C
8A
1
6A
5A
IC = 4 A
0.1
0.1
1
10
IB / A
Fig.9. Typical collector-emitter saturation voltage.
V_CEsat = f (I_B); parameter I_C
Eoff / uJ
1000
IC = 8 A
BU2525A
7A
100
10
0.1
1
10
IB / A
Fig.10. Typical turn-off losses. T_j = 85˚C
Eoff = f (I_B); parameter I_C; f = 32 kHz
ts, tf / us
12
BU2525A
11
32 kHz
10
9
8
7
ts
6
5
4
IC =
3
2
1
8A
7A
tf
0
0.1
1
10
IB / A
Fig.11. Typical collector storage and fall time.
ts = f (I_B); tf = f (I_B); parameter I_C; T_j = 85˚C; f = 32 kHz
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.12. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25˚C} = f (T_mb)
Zth / (K/W)
10
BU2525A
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
P_D
tp
D=
tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
T
t
1E+00
Fig.13. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
September 1997
4
Rev 1.100