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| BU2525DW Datasheet, PDF (2/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2525DW
STATIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
IEBO
REB
BVEBO
VCEOsust
Emitter cut-off current
Base-emitter resistance
Emitter-base breakdown voltage
Collector emitter-sustaining voltage
VCEsat
VBEsat
hFE
hFE
VF
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VEB = 6.0 V; IC = 0 A
VEB = 6.0 V
IB = 600 mA
IB = 0A;IC = 100mA;
L= 25 mH
IC = 8.0 A; IB = 1.6 A
IC = 8.0 A; IB = 1.6 A
IC = 1 A; VCE = 5 V
IC = 8 A; VCE = 5 V
IF = 8 A
MIN.
-
-
72
-
7.5
800
-
-
-
5
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
110 218 mA
55
-
â¦
13.5 -
V
-
-
V
-
5.0
V
-
1.1
V
11
-
7
9.5
1.6 2.0
V
DYNAMIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Cc
Collector capacitance
Switching times (32 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
Vfr
Anti-parallel diode forward recovery
voltage
tfr
Anti-parallel diode forward recovery
time
CONDITIONS
IE = 0 A; VCB = 10 V; f = 1 MHz
ICsat = 8.0 A; LC = 260 µH; Cfb = 13 nF;
IB(end) = 1.1 A; LB = 2.5 µH; -VBB = 4 V;
(-dIB/dt = 1.6 A/µs)
IF = 8 A; dIF/dt = 50 A/µs
VF = 5 V
TYP.
145
3.0
0.2
16
410
MAX.
-
4.0
0.35
UNIT
pF
µs
µs
V
ns
TRANSISTOR
IC
DIODE
ICsat
t
IB
VCE
10us
13us
32us
IBend
t
t
Fig.1. Switching times waveforms.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
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