BU2525DW Datasheet, PDF (3/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2525DW
IF
IF
10%
t _fr
time
VF
5V
V _fr
VF
time
Fig.3. Definition of anti-parallel diode V_fr and t_fr
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
D.U.T.
LB
Cfb
Rbe
Fig.4. Switching times test circuit
hFE
100
5V
10
1V
BU2525D
Tj = 25 C
Tj = 125 C
1
0.1
Fig.5.
1
10
100
IC / A
Typical DC current gain. h_FE = f (I_C)
parameter V_CE
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
1
BU2525A
0.9
0.8
0.7
IC/IB=
3
0.6
4
0.5
5
0.4
0.1
1
10
IC / A
Fig.6. Typical base-emitter saturation voltage.
V_BEsat = f (I_C); parameter I_C/I_B
VCESAT / V
1
0.9
0.8
0.7
0.6
IC/IB =
5
4
3
BU2525A
0.5
Tj = 25 C
0.4
Tj = 125 C
0.3
0.2
0.1
0
0.1
1
10
100
IC / A
Fig.7. Typical collector-emitter saturation voltage.
V_CEsat = f (I_C); parameter I_C/I_B
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
BU2525A
1
0.9
0.8
0.7
0.6
0
Fig.8.
IC=
8A
6A
5A
4A
1
2
3
4
IB / A
Typical base-emitter saturation voltage.
V_BEsat = f (I_B); parameter I_C
September 1997
3
Rev 1.100