BU2508AX Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2508AX
1.2 ^{VBESAT / V}
1.1
Tj = 25 C
Tj = 125 C
1
0.9
0.8
IC/IB=
0.7
3
4
0.6
5
0.5
0.4
0.1
1
10
IC / A
Fig.7. Typical base-emitter saturation voltage.
V_BEsat = f (I_C); parameter I_C/I_B
1 ^{VCESAT / V}
0.9
IC/IB=
0.8
5
0.7
4
0.6
3
0.5
Tj = 25 C
0.4
Tj = 125 C
0.3
0.2
0.1
0
0.1
1
10
IC / A
Fig.8. Typical collector-emitter saturation voltage.
V_CEsat = f (I_C); parameter I_C/I_B
1.2 ^{VBESAT / V}
Tj = 25 C
1.1
Tj = 125 C
1
0.9
IC=
6A
0.8
4.5A
3A
2A
0.7
0.6
0
1
2
3
4
IB / A
Fig.9. Typical base-emitter saturation voltage.
V_BEsat = f (I_B); parameter I_C
10 ^{VCESAT / V}
6A
4.5A
1
Tj = 25 C
Tj = 125 C
3A
IC=2A
0.1
0.1
1
10
IB / A
Fig.10. Typical collector-emitter saturation voltage.
V_CEsat = f (I_B); parameter I_C
1000 ^{Eoff / uJ}
IC = 4.5A
3.5A
100
10
0.1
1
10
IB / A
Fig.11. Typical turn-off losses. T_j = 85˚C
Eoff = f (I_B); parameter I_C; f = 16 kHz
12 ^{ts, tf / us}
11
10
ts
9
8
7
6
5
4
IC =
3
4.5A
2
3.5A
1
tf
0
0.1
1
10
IB / A
Fig.12. Typical collector storage and fall time.
ts = f (I_B); tf = f (I_B); parameter I_C; T_j = 85˚C; f = 16 kHz
November 1997
4
Rev 2.300