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| BU2508AX Datasheet, PDF (2/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2508AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all R.H. ⤠65 % ; clean and dustfree
three terminals to external
heatsink
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VEB = 7.5 V; IC = 0 A
IB = 1 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 4.5 A; IB = 1.12 A
IC = 4.5 A; IB = 1.7 A
IC = 100 mA;VCE = 5 V
IC = 4.5 A;VCE = 1 V
MIN.
-
-
-
7.5
700
-
-
-
4
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
1.0 mA
13.5 -
V
-
-
V
-
1.0
V
-
1.1
V
13
-
5.5 7.0
DYNAMIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Cc
Collector capacitance
Switching times (16 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (38 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
IE = 0 A; VCB = 10 V; f = 1 MHz
ICsat = 4.5 A; IB(end) = 1.1 A; LB = 6 µH;
-VBB = 4 V; (-dIB/dt = 0.6 A/µs)
ICsat = 4.0 A; IB(end) = 0.9 A; LB = 6 µH;
-VBB = 4 V; (-dIB/dt = 0.6 A/µs)
TYP. MAX. UNIT
80
-
pF
5.0 6.0 µs
0.4 0.6 µs
4.7 5.7 µs
0.25 0.35 µs
2 Measured with half sine-wave voltage (curve tracer).
November 1997
2
Rev 2.300
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