BU2508AX Datasheet, PDF (3/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2508AX
+ 50v
100-200R
Horizontal
Oscilloscope
Vertical
100R
1R
6V
30-60 Hz
Fig.1. Test circuit for V_CEOsust.
IC / mA
250
200
100
0
VCE / V
min
VCEOsust
Fig.2. Oscilloscope display for V_CEOsust.
TRANSISTOR
IC
DIODE
ICsat
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.3. Switching times waveforms.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.4. Switching times definitions.
+ 150 v nominal
adjust for ICsat
1mH
IBend
-VBB
LB
D.U.T.
BY228
12nF
Fig.5. Switching times test circuit.
100 ^{h FE}
5V
10
1V
Tj = 25 C
Tj = 125 C
1
0.01
0.1
1
10
IC / A
Fig.6. Typical DC current gain. h_FE = f (I_C)
parameter V_CE
November 1997
3
Rev 2.300