BTA151 Datasheet, PDF (4/6 Pages) NXP Semiconductors – Thyristors sensitive gate

Philips Semiconductors
Thyristors
sensitive gate
Product specification
BTA151 series
IGT(Tj)
3 ^{IGT(25 C)}
BT151
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.7. Normalised gate trigger current
I_GT(T_j)/ I_GT(25˚C), versus junction temperature T_j.
IL(Tj)
IL(25 C)
3
BT145
2.5
2
1.5
1
0.5
0
-50
Fig.8.
0
50
100
150
Tj / C
Normalised latching current I_L(T_j)/ I_L(25˚C),
versus junction temperature T_j.
IH(Tj)
IH(25 C)
3
BT151
2.5
2
1.5
1
0.5
0
-50
Fig.9.
0
50
100
150
Tj / C
Normalised holding current I_H(T_j)/ I_H(25˚C),
versus junction temperature T_j.
30 ^{IT / A}
Tj = 125 C
Tj = 25 C
25
Vo = 1.06 V
Rs = 0.0304 ohms
20
BT151
typ
max
15
10
5
0
0
0.5
1
1.5
2
VT / V
Fig.10. Typical and maximum on-state characteristic.
10 ^{Zth j-mb (K/W)}
BT151
1
0.1
0.01
P
D
tp
t
0.001
10us 0.1ms 1ms 10ms 0.1s
1s
10s
tp / s
Fig.11. Transient thermal impedance Z_{th j-mb}, versus
pulse width t_p.
10000 ^{dVD/dt (V/us)}
1000
100
RGK = 100 Ohms
gate open circuit
10
0
50
100
150
Tj / C
Fig.12. Typical, critical rate of rise of off-state voltage,
dV_D/dt versus junction temperature T_j.
September 1997
4
Rev 1.200