BTA151 Datasheet, PDF (2/6 Pages) NXP Semiconductors – Thyristors sensitive gate

Philips Semiconductors
Thyristors
sensitive gate
Product specification
BTA151 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
R_{th j-mb}
R_{th j-a}
Thermal resistance
junction to mounting base
Thermal resistance
in free air
junction to ambient
MIN. TYP. MAX. UNIT
-
-
1.3 K/W
-
60
- K/W
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
I_GT
Gate trigger current
I_L
Latching current
I_H
Holding current
V_T
On-state voltage
V_GT
Gate trigger voltage
I_D, I_R
Off-state leakage current
CONDITIONS
V_D = 12 V; I_T = 0.1 A
V_D = 12 V; I_GT = 0.1 A
V_D = 12 V; I_GT = 0.1 A
I_T = 23 A
V_D = 12 V; I_T = 0.1 A
V_D = V_DRM(max); I_T = 0.1 A; T_j = 125 ˚C
V_D = V_DRM(max); V_R = V_RRM(max); T_j = 125 ˚C
MIN.
-
-
-
-
-
0.25
-
TYP.
2
10
7
1.4
0.6
0.4
0.1
MAX.
4
40
16
1.75
1.5
-
0.5
UNIT
mA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
dV_D/dt
t_gt
t_q
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
V_D = 67% V_DRM(max); T_j = 125 ˚C;
exponential waveform
Gate open circuit
R_GK = 100 Ω
I_TM = 40 A; V_D = V_DRM; I_G = 0.1 A;
dI_G/dt = 5 A/µs
V_D = 67% V_DRM(max); I_TM = 20 A; V_R = 25 V;
dI_TM/dt = 30 A/µs; dV_D/dt = 50 V/µs;
R_GK = 100 Ω
MIN.
50
200
-
-
TYP.
130
1000
2
70
MAX. UNIT
- V/µs
- V/µs
-
µs
-
µs
September 1997
2
Rev 1.200