BTA151 Datasheet, PDF (1/6 Pages) NXP Semiconductors – Thyristors sensitive gate

Philips Semiconductors
Thyristors
sensitive gate
Product specification
BTA151 series
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristors in a plastic envelope,
intended for use in general purpose
switching and phase control
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
V_DRM,
V_RRM
I_T(AV)
I_T(RMS)
I_TSM
BTA151- 500R 650R 800R
Repetitive peak off-state
500 650 800 V
voltages
Average on-state current
7.5 7.5 7.5 A
RMS on-state current
12 12 12 A
Non-repetitive peak on-state 100 100 100 A
current
PINNING - SOT82
PIN
DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
PIN CONFIGURATION
1 23
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM, V_RRM Repetitive peak off-state
-
voltages
I_T(AV)
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
V_RGM
P_GM
P_G(AV)
T_stg
T_j
Average on-state current half sine wave; T_mb ≤ 109 ˚C
-
RMS on-state current
all conduction angles
-
Non-repetitive peak
on-state current
half sine wave; T_j = 25 ˚C prior to
surge
t = 10 ms
-
t = 8.3 ms
-
I²t for fusing
t = 10 ms
-
Repetitive rate of rise of I_TM = 20 A; I_G = 50 mA;
-
on-state current after
dI_G/dt = 50 mA/µs
triggering
Peak gate current
-
Peak gate voltage
-
Peak reverse gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
MAX.
-500R -650R -800R
500¹ 650¹ 800
7.5
12
100
110
50
50
2
5
12
5
0.5
150
125
UNIT
V
A
A
A
A
A²s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.200