BFT25_CNV_15 Datasheet, PDF (4/10 Pages) NXP Semiconductors – NPN 2 GHz wideband transistor

NXP Semiconductors
NPN 2 GHz wideband transistor
Product specification
BFT25
handbook,⁶h⁰alfpage
h _FE
40
MEA908
20
0
10 ^–3
10^–2
10 ^–1
1 _{I C (mA)} 10
V_CE = 1 V; T_j = 25 C.
Fig.2 DC current gain as a function of collector
current.
1
Cc
(pF)
0.8
MEA914
0.6
0.4
0.2
0
0
2
4
6
8
10
V _CB (V)
I_E = i_e = 0; f = 1 MHz; T_j = 25 C.
Fig.3 Collector capacitance as a function of
collector-base voltage.
handbook, h³alfpage
fT
(GHz)
2
MEA907
1
0
0
0.5
1
1.5
2
IC (mA)
V_CE = 1 V; f = 500 MHz; T_j = 25 C.
Fig.4 Transition frequency as a function of
collector current.
November 1992
handbook, h⁸alfpage
F
(dB)
6
MEA909
4
2
0
10^–2
10^–1
1 _{I C (mA)} 10
V_CE = 1 V; Z_S = opt.; f = 500 MHz; T_amb = 25 C.
Fig.5 Minimum noise figure as a function of
collector current.
4