BFT25_CNV_15 Datasheet, PDF (2/10 Pages) NXP Semiconductors – NPN 2 GHz wideband transistor

NXP Semiconductors
NPN 2 GHz wideband transistor
Product specification
BFT25
DESCRIPTION
NPN transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
low power amplifiers, such as in
pocket phones, paging systems, etc.
The transistor features low current
consumption (100 A to 1 mA); due to
its high transition frequency, it also
has excellent wideband properties
and low noise up to high frequencies.
PINNING
PIN
DESCRIPTION
Code: V1p
1 base
2 emitter
3 collector
lfpage
3
1
Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
V_CBO
V_CEO
I_c
P_tot
f_T
C_re
G_UM
F
PARAMETER
CONDITIONS
collector-base voltage
open emitter
collector-emitter voltage
open base
DC collector current
total power dissipation
transition frequency
feedback capacitance
maximum unilateral power gain
noise figure
up to T_s = 167 C; note 1
I_C = 1 mA; V_CE = 1 V; f = 500 MHz;
T_amb = 25 C
I_C = 1 mA; V_CE = 1 V; f = 1 MHz;
T_amb = 25 C
I_C = 1 mA; V_CE = 1 V; f = 500 MHz;
T_amb = 25 C
I_C = 1 mA; V_CE = 1 V; f = 500 MHz;
T_amb = 25 C
TYP.




2.3
MAX.
8
5
6.5
30

UNIT
V
V
mA
mW
GHz

0.45 pF
18

dB
3.8

dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
f  1 MHz
up to T_s = 167 C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN.






65

MAX.
8
5
2
6.5
10
30
150
175
UNIT
V
V
V
mA
mA
mW
C
C
November 1992
2