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| BFT25_CNV_15 Datasheet, PDF (3/10 Pages) NXP Semiconductors – NPN 2 GHz wideband transistor | |||
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NXP Semiconductors
NPN 2 GHz wideband transistor
Product specification
BFT25
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 167ï°C; note 1
Note
1. Ts = is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
260 K/W
CHARACTERISTICS
Tj = 25 ï°C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
hFE
fT
Cc
Ce
Cre
GUM
F
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
IE = 0; VCB = 5 V
IC = 10 ïA; VCE = 1 V
IC = 1 mA; VCE = 1 V
IC = 1 mA; VCE = 1 V; f = 500 MHz
IE = ie = 0; VCB = 0.5 V; f = 1 MHz
Ic = ic = 0; VEB = 0; f = 1 MHz
IC = 1 mA; VCE = 1 V; f = 1 MHz;
Tamb = 25 ï°C
IC = 1 mA; VCE = 1 V; f = 500 MHz;
Tamb = 25 ï°C
IC = 1 mA; VCE = 1 V; f = 800 MHz;
Tamb = 25 ï°C
IC = 0.1 mA; VCE = 1 V;
f = 500 MHz; Tamb = 25 ï°C
IC = 1 mA; VCE = 1 V; f = 500 MHz;
Tamb = 25 ï°C
MIN.
ï
20
20
1.2
ï
ï
ï
ï
ï
ï
ï
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM
=
10 log
------------------------S----2---1----2-----------------------
ï¨1 â S11 2ï©ï¨1 â S22 2ï©
dB.
TYP.
ï
30
40
2.3
ï
ï
ï
18
12
5.5
3.8
MAX. UNIT
50
nA
ï
ï
ï
GHz
0.6 pF
0.5 pF
0.45 pF
ï
dB
ï
dB
ï
dB
ï
dB
November 1992
3
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