BFR93AW Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR93AW
CHARACTERISTICS
T_j = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
I_CBO
collector leakage current
h_FE
DC current gain
C_c
collector capacitance
C_e
emitter capacitance
C_re
feedback capacitance
f_T
transition frequency
G_UM
maximum unilateral power
gain; note 1
F
noise figure
CONDITIONS
MIN.
I_E = 0; V_CB = 5 V
−
I_C = 30 mA; V_CE = 5 V
40
I_E = i_e = 0; V_CB = 5 V; f = 1 MHz −
I_C = i_c = 0; V_EB = 0.5 V;
−
f = 1 MHz
I_C = 0; V_CE = 5 V; f = 1 MHz
−
I_C = 30 mA; V_CE = 5 V;
4
f = 500 MHz
I_C = 30 mA; V_CE = 8 V;
−
f = 1 GHz; T_amb = 25 °C
I_C = 30 mA; V_CE = 8 V;
−
f = 2 GHz; T_amb = 25 °C
I_C = 5 mA; V_CE = 8 V;
−
f = 1 GHz; Γ_s = Γ_opt
I_C = 5 mA; V_CE = 8 V;
−
f = 2 GHz; Γ_s = Γ_opt
TYP.
−
90
0.7
2.3
0.6
5
13
8
1.5
2.1
MAX.
50
−
−
−
UNIT
nA
pF
pF
−
pF
−
GHz
−
dB
−
dB
−
dB
−
dB
Note
1. G_UM is the maximum unilateral power gain, assuming s₁₂ is zero and G_UM
=
10 log --₍--1-----_–------s---₁---₁----₂^s---₎-²--¹-₍---1-²----_–------s---₂--₂-----₂---₎-
dB.
1995 Sep 18
4