BFR93AW Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR93AW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITION
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to T_s = 93 °C; see Fig.2; note 1
MIN.
−
−
−
−
−
−65
−
MAX.
15
12
2
35
300
+150
150
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to
soldering point
CONDITION
up to T_s = 93 °C; note 1
Note to the Limiting values and Thermal characteristics
1. T_s is the temperature at the soldering point of the collector pin.
VALUE
190
UNIT
K/W
400
P _tot
(mW)
300
MLB540
200
100
0
0
50
100
150
200
Ts ( ^o C)
Fig.2 Power derating curve.
1995 Sep 18
3