BFR93AW Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR93AW
FEATURES
• High power gain
• Gold metallization ensures
excellent reliability
• SOT323 (S-mini) package.
APPLICATIONS
It is designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR93AW uses the same crystal
as the SOT23 version, BFR93A.
PINNING
PIN
DESCRIPTION
1 base
2 emitter
3 collector
handbook, 2 columns
3
1
2
Top view
MBC870
Marking code: R2.
Fig.1 SOT323
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
I_C
P_tot
h_FE
C_re
f_T
G_UM
F
T_j
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power
gain
noise figure
junction temperature
open emitter
open base
up to T_s = 93 °C; note 1
I_C = 30 mA; V_CE = 5 V
I_C = 0; V_CE = 5 V; f = 1 MHz;
T_amb = 25 °C
I_C = 30 mA; V_CE = 5 V; f = 500 MHz
I_C = 30 mA; V_CE = 8 V; f = 1 GHz;
T_amb = 25 °C
I_C = 30 mA; V_CE = 8 V; f = 2 GHz;
T_amb = 25 °C
I_C = 5 mA; V_CE = 8 V; f = 1 GHz;
Γ_s = Γ_opt
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
40
−
TYP.
−
−
−
−
90
0.6
MAX.
15
12
35
300
−
−
UNIT
V
V
mA
mW
pF
4
5
−
GHz
−
13
−
dB
−
8
−
dB
−
1.5
−
dB
−
−
150 °C
1995 Sep 18
2