BFR92AT Datasheet, PDF (4/16 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR92AT
CHARACTERISTICS
T_j = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
h_FE
C_c
C_e
C_re
f_T
G_UM
F
collector leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral
power gain; note 1
noise figure
I_E = 0; V_CB = 10 V
I_C = 15 mA; V_CE = 10 V
I_E = i_e = 0; V_CB = 10 V; f = 1 MHz
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz
I_C = 0; V_CE = 10 V; f = 1 MHz
I_C = 15 mA; V_CE = 10 V; f = 500 MHz
I_C = 15 mA; V_CE = 10 V; f = 1 GHz;
T_amb = 25 °C
I_C = 15 mA; V_CE = 10 V; f = 2 GHz;
T_amb = 25 °C
I_C = 5 mA; V_CE = 10 V; f = 1 GHz; Γ_s = Γ_opt
I_C = 5 mA; V_CE = 10 V; f = 2 GHz; Γ_s = Γ_opt
MIN.
−
40
−
−
−
3.5
−
TYP.
−
90
0.6
0.9
0.35
5
14
MAX.
50
−
−
−
−
−
−
UNIT
nA
pF
pF
pF
GHz
dB
−
8
−
dB
−
2
−
dB
−
3
−
dB
Note
1. G_UM is the maximum unilateral power gain, assuming s₁₂ is zero and G_UM = 10 log ₍---1-----_–------s---₁---₁---s-₂---²₎--¹₍---1-²----_–------s---₂--₂-----₂---₎ dB
2000 Mar 28
4