BFR92AT Datasheet, PDF (2/16 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR92AT
FEATURES
• High power gain
• Gold metallization ensures
excellent reliability
• SOT416 (SC-75) package.
APPLICATIONS
RF amplifiers, mixers and oscillators
with signal frequencies up to 1 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT416 (SC-75) package. ^fpage
3
The BFR92AT uses the same crystal
as the SOT23 version: BFR92A.
PINNING
PIN
DESCRIPTION
1 base
2 emitter
3 collector
1
Top view
2
MBK090
Marking code: P2.
Fig.1 SOT416.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
I_C
P_tot
h_FE
C_re
f_T
G_UM
F
T_j
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
noise figure
junction temperature
open emitter
open base
up to T_s = 75 °C; note 1
I_C = 15 mA; V_CE = 10 V
I_C = 0; V_CE = 10 V; f = 1 MHz; T_amb = 25 °C
I_C = 15 mA; V_CE = 10 V; f = 500 MHz
I_C = 15 mA; V_CE = 10 V; f = 1 GHz;
T_amb = 25 °C
I_C = 15 mA; V_CE = 10 V; f = 2 GHz;
T_amb = 25 °C
I_C = 5 mA; V_CE = 10 V; f = 1 GHz; Γ_s = Γ_opt
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
40
−
3.5
−
−
−
−
TYP.
−
−
−
−
90
0.35
5
14
8
2
−
MAX. UNIT
20
V
15
V
25
mA
150 mW
−
−
pF
−
GHz
−
dB
−
dB
−
dB
150 °C
2000 Mar 28
2