BFR92AT Datasheet, PDF (3/16 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to T_s = 75 °C; see Fig.2; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to soldering point
Product specification
BFR92AT
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
2
25
150
+150
150
UNIT
V
V
V
mA
mW
°C
°C
VALUE
500
UNIT
K/W
200
Ptot
(mW)
150
MGU068
100
50
0
0
50
100
150
200
Ts (°C)
Fig.2 Power derating curve.
2000 Mar 28
3