BFR53 Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN 2 GHz wideband transistor

Philips Semiconductors
NPN 2 GHz wideband transistor
Product specification
BFR53
handboo¹k,⁰h⁰alfpage
h _FE
90
80
70
60
50
0
MEA458
50
I _C (mA)
100
V_CE = 5 V; T_j = 25 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
handbook², ^.h⁰alfpage
Cc
(pF)
1.6
1.2
MEA457
0.8
0.4
0
0
4
8
12
16
20
VCB (V)
I_E = i_e = 0; f = 1 MHz; T_j = 25 °C.
Fig.3 Collector capacitance as a function of
collector-base voltage; typical values.
handbook², ^.h²alfpage
fT
(GHz)
1.8
MEA459
handbook,³h⁰alfpage
gain
(dB)
20
MEA455
1.4
1.0
0
25
I _C (mA)
50
10
0
10²
G _UM
I S12 I ²
10 ³
f (MHz)
10⁴
V_CE = 5 V; f = 500 MHz; T_j = 25 °C.
Fig.4 Transition frequency as a function of
collector current; typical values.
1997 Oct 28
I_C = 30 mA; V_CE = 5 V; T_amb = 25 °C.
Fig.5 Gain as a function of frequency;
typical values.
4