English
Language : 

BFR53 Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN 2 GHz wideband transistor
◁
Philips Semiconductors
NPN 2 GHz wideband transistor
Product specification
BFR53
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point Ts ≤ 85 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
VALUE
260
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power gain
(note 1)
F
noise figure
CONDITIONS
IE = 0; VCB = 10 V
IC = 25 mA; VCE = 5 V; see Fig.2
IC = 50 mA; VCE = 5 V; see Fig.2
IE = ie = 0; VCB = 5 V; f = 1 MHz;
see Fig.3
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 2 mA; VCE = 5 V; f = 1 MHz;
Tamb = 25 °C
IC = 25 mA; VCE = 5 V; f = 500 MHz;
see Fig.4
IC = 30 mA; VCE = 5 V; f = 800 MHz;
Tamb = 25 °C; see Fig.5
IC = 2 mA; VCE = 5 V; f = 500 MHz;
Tamb = 25 °C; see Fig.6
MIN.
−
25
25
−
−
−
−
−
−
TYP.
−
−
−
0.9
1.5
0.9
2
10.5
−
MAX. UNIT
50
nA
−
−
−
pF
−
pF
−
pF
−
GHz
−
dB
5
dB
Note
1. GUM is the maximum unilateral power gain, assuming
S12 is
zero and
GUM
=
10
log----1-----–------S----1---1----2S----2---1---1-2----–------S----2--2-----2---- dB˙ .
1997 Oct 28
3
 ▷