BFR53 Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN 2 GHz wideband transistor

Philips Semiconductors
NPN 2 GHz wideband transistor
Product specification
BFR53
FEATURES
• Very low intermodulation distortion
• Very high power gain.
APPLICATIONS
• Thick and thin-film circuits.
PINNING
PIN
DESCRIPTION
1 base
2 emitter
3 collector
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
fpage
3
1
Top view
Marking code: N1.
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
I_CM
P_tot
C_re
f_T
G_UM
collector-base voltage
open emitter
collector-emitter voltage
open base
peak collector current
f > 1 MHz
total power dissipation
T_s ≤ 85 °C
feedback capacitance
I_C = 2 mA; V_CE = 5 V; f = 1 MHz;
T_amb = 25 °C
transition frequency
I_C = 25 mA; V_CE = 5 V; f = 500 MHz;
T_j = 25 °C
maximum unilateral power gain I_C = 30 mA; V_CE = 5 V; f = 800 MHz;
T_amb = 25 °C
TYP.
−
−
−
−
0.9
MAX.
18
10
100
250
−
UNIT
V
V
mA
mW
pF
2
−
GHz
10.5
−
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
f > 1 MHz
T_s ≤ 85 °C (note 1)
Note
1. T_s is the temperature at the soldering point of the collector pin.
TYP.
−
−
−
−
−
−
−65
−
MAX.
18
10
2.5
50
100
250
+150
150
UNIT
V
V
V
mA
mA
mW
°C
°C
1997 Oct 28
2