BFQ17 Datasheet, PDF (4/6 Pages) NXP Semiconductors – NPN 1 GHz wideband transistor

Philips Semiconductors
NPN 1 GHz wideband transistor
Product specification
BFQ17
160
handbook, halfpage
h _FE
120
MBB365
80
40
0
0
100
I _C (mA)
200
V_CE = 5 V; T_j = 25 °C.
Fig.2 DC current gain as a function of collector
current.
handbook,¹h⁰alfpage
Cc
(pF)
8
MBB828
6
4
2
0
0
10
20
30
V _CB
40
(V)
I_E = i_e = 0; f = 1 MHz; T_j = 25 °C.
Fig.3 Collector capacitance as a function of
collector-base voltage.
2
handbo_fo_Tk, halfpage
(GHz)
1.6
MBB364
1.2
0.8
0.4
0
0
40
80
120
160
IC (mA)
V_CE = 15 V; f = 500 MHz; T_j = 25 °C.
Fig.4 Transition frequency as a function of
collector current.
September 1995
4