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| BFQ17 Datasheet, PDF (3/6 Pages) NXP Semiconductors – NPN 1 GHz wideband transistor | |||
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Philips Semiconductors
NPN 1 GHz wideband transistor
Product speciï¬cation
BFQ17
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 145 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
30 K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
ICBO
VCE sat
hFE
Cc
Cre
collector cut-off current
collector-emitter saturation voltage
DC current gain
collector capacitance
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power gain
(note 1)
CONDITIONS
IE = 0; VCB = 20 V; Tj = 50 °C
IC = 100 mA; IB = 10 mA
IC = 150 mA; VCE = 5 V
IE = ie = 0; VCB = 15 V; f = 1 MHz
IC = 10 mA; VCE = 15 V;
f = 1 MHz; Tamb = 25 °C
IC = 150 mA; VCE = 15 V;
f = 500 MHz
IC = 60 mA; VCE = 15 V;
f = 200 MHz; Tamb = 25 °C
IC = 60 mA; VCE = 15 V;
f = 800 MHz; Tamb = 25 °C
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log -ï£ï£«---1-----â------S----1---1----2S----2--ï£ï£«-1---1-2----â------S----2--2-----2---- dB.
MIN. TYP. MAX. UNIT
â â 20 µA
â â 0.5 V
25 80 â
ââ4
pF
â 1.9 â
pF
â 1.5 â
GHz
â 16 â
dB
â 6.5 â
dB
September 1995
3
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