BFQ17 Datasheet, PDF (2/6 Pages) NXP Semiconductors – NPN 1 GHz wideband transistor

Philips Semiconductors
NPN 1 GHz wideband transistor
Product specification
BFQ17
DESCRIPTION
NPN transistor in a SOT89 plastic
envelope intended for application in
thick and thin-film circuits. The
transistor has extremely good
intermodulation properties and a high
power gain.
PINNING
PIN
DESCRIPTION
Code: FA
1 emitter
2 collector
3 base
page
1
2
3
Bottom view
MBK514
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_CM
P_tot
f_T
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
transition frequency
C_re
feedback capacitance
CONDITIONS
TYP. MAX. UNIT
open emitter
open base
− 40 V
− 25 V
− 300 mA
up to T_s = 145 °C (note 1)
−1
I_C = 150 mA; V_CE = 15 V; f = 500 MHz; 1.5 −
T_j = 25 °C
I_C = 10 mA; V_CE = 15 V; f = 1 MHz;
T_amb = 25 °C
1.9 −
W
GHz
pF
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CER
V_CEO
V_EBO
I_C
I_CM
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
R_BE ≤ 50 Ω
open base
open collector
f > 1 MHz
up to T_s = 145 °C (note 1)
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN. MAX. UNIT
−
40
V
−
40
V
−
25
V
−
2
V
−
150 mA
−
300 mA
−
1
W
−65 150 °C
−
175 °C
September 1995
2