BDX35 Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN switching transistors

Philips Semiconductors
NPN switching transistors
Product specification
BDX35; BDX36; BDX37
SYMBOL
PARAMETER
CONDITIONS
V_BEsat
V_BEsat
C_c
f_T
base-emitter saturation voltage
base-emitter saturation voltage
BDX35; BDX37
BDX36
collector capacitance
transition frequency
I_C = 5 A; I_B = 0.5 A
I_C = 7 A; I_B = 0.7 A
I_C = 10 A; I_B = 1 A
I_E = i_e = 0; V_CB = 10 V; f = 1 MHz
I_C = 0.5 A; V_CE = 5 V; f = 100 MHz
Switching times (between 10% and 90% levels)
t_on
turn-on time
t_off
turn-off time
I_Con = 1 A; I_Bon = 0.1 A; I_Boff = −0.1 A
I_Con = 2 A; I_Bon = 0.2 A; I_Boff = −0.2 A
I_Con = 5 A; I_Bon = 0.5 A; I_Boff = −0.5 A
I_Con = 1 A; I_Bon = 0.1 A; I_Boff = −0.1 A
I_Con = 2 A; I_Bon = 0.2 A; I_Boff = −0.2 A
I_Con = 5 A; I_Bon = 0.5 A; I_Boff = −0.5 A
MIN. TYP. MAX. UNIT
−
−
1.7 V
−
−
2
V
−
−
2.5 V
−
40 60 pF
−
100 −
MHz
−
60 100 ns
−
−
80 ns
−
180 300 ns
−
600 800 ns
−
450 700 ns
−
350 500 ns
handbook,⁸f⁰ull pagewidth
hFE
60
MGD840
40
20
010_−1
V_CE = 1 V.
1
10
10²
10³
10⁴
IC (mA)
Fig.2 DC current gain; typical values.
1997 Apr 16
4