BDX35 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN switching transistors

Philips Semiconductors
NPN switching transistors
Product specification
BDX35; BDX36; BDX37
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
collector-base voltage
BDX35
BDX36; BDX37
collector-emitter voltage
BDX35; BDX36
BDX37
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T_mb ≤ 75 °C
T_amb ≤ 25 °C
MIN. MAX. UNIT
−
100
V
−
120
V
−
60
V
−
75
V
−
5
V
−
5
A
−
10
A
−
2
A
−
15
W
−
1.25 W
−65
+150 °C
−
150
°C
−65
+150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
R_{th j-mb}
thermal resistance from junction to ambient
in free air
thermal resistance from junction to mounting base
VALUE
100
5
UNIT
K/W
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_CBO
I_EBO
h_FE
V_CEsat
V_CEsat
collector cut-off current
BDX35
collector cut-off current
I_E = 0; V_CB = 80 V
I_E = 0; V_CB = 80 V; T_j = 100 °C
BDX36; BDX37
emitter cut-off current
DC current gain
BDX35; BDX36
I_E = 0; V_CB = 100 V
I_E = 0; V_CB = 100 V; T_j = 100 °C
I_C = 0; V_EB = 5 V
I_C = 0.5 A; V_CE = 10 V; see Fig.2
BDX37
collector-emitter saturation voltage I_C = 5 A; I_B = 0.5 A
collector-emitter saturation voltage
BDX35; BDX37
BDX36
I_C = 7 A; I_B = 0.7 A
I_C = 10 A; I_B = 1 A
MIN. TYP. MAX. UNIT
−
−
100 nA
−
−
10 µA
−
−
100 nA
−
−
10 µA
−
−
100 nA
45 130 450
45 80 450
−
−
900 mV
−
−
1.2 V
−
−
2
V
1997 Apr 16
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