BDX35 Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN switching transistors

Philips Semiconductors
NPN switching transistors
Product specification
BDX35; BDX36; BDX37
FEATURES
• High current (max. 5 A)
• Low voltage (max. 75 V).
APPLICATIONS
• High-current switching in power applications.
DESCRIPTION
NPN switching transistor in a TO-126; SOT32 plastic
package.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector, connected to the metal part of
the mounting surface
base
handbook, halfpage
2
3
1
1 2 3 Top view
MAM254
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
collector-base voltage
BDX35
BDX36; BDX37
V_CEO
collector-emitter voltage
BDX35; BDX36
BDX37
I_C
collector current (DC)
P_tot
total power dissipation
h_FE
DC current gain
f_T
transition frequency
t_off
turn-off time
CONDITIONS
MIN.
open emitter
−
−
open base
−
−
−
T_mb ≤ 75 °C
−
I_C = 0.5 A; V_CE = 10 V
45
I_C = 0.5 A; V_CE = 5 V; f = 100 MHz −
I_Con = 5 A; I_Bon = 0.5 A; I_Boff = −0.5 A −
TYP.
−
−
−
−
−
−
−
100
350
MAX.
100
120
60
75
5
15
450
−
500
UNIT
V
V
V
V
A
W
MHz
ns
1997 Apr 16
2