BCF29 Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP general purpose transistors

Philips Semiconductors
PNP general purpose transistors
Product specification
BCF29; BCF30
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_EBO
h_FE
h_FE
V_CEsat
V_BEsat
V_BE
C_c
f_T
F
collector cut-off current
emitter cut-off current
DC current gain
BCF29
I_E = 0; V_CB = −32 V
−
I_E = 0; V_CB = −32 V; T_j = 100 °C
−
I_C = 0; V_EB = −5 V
−
I_C = −10 µA; V_CE = −5 V
−
BCF30
−
DC current gain
BCF29
I_C = −2 mA; V_CE = −5 V
120
BCF30
215
collector-emitter saturation voltage I_C = −10 mA; I_B = −0.5 mA
−
I_C = −50 mV; I_B = −2.5 mA
−
base-emitter saturation voltage I_C = −10 mA; I_B = −0.5 mA
−
I_C = −50 mA; I_B = −2.5 mA
−
base-emitter voltage
I_C = −2 mA; V_CE = −5 V
−600
collector capacitance
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz
−
transition frequency
I_C = −10 mA; V_CE = −5 V; f = 100 MHz 100
noise figure
I_C = −200 µA; V_CE = −5 V; R_S = 2 kΩ; −
f = 1 kHz; B = 200 Hz
−
−
−
90
150
−
−
−80
−150
−720
−810
−
4.5
−
1
−100
−10
−100
−
−
260
500
−300
−
−
−
−750
−
−
4
nA
µA
nA
mV
mV
mV
mV
mV
pF
MHz
dB
1997 May 22
4