BCF29 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP general purpose transistors

Philips Semiconductors
PNP general purpose transistors
Product specification
BCF29; BCF30
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−32
−32
−5
−100
−200
−100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
VALUE
500
UNIT
K/W
1997 May 22
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