BCF29 Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP general purpose transistors

Philips Semiconductors
PNP general purpose transistors
Product specification
BCF29; BCF30
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 32 V).
APPLICATIONS
• Low level, low noise general purpose applications in
thick and thin-film circuits.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BCF32 and BCF33.
MARKING
TYPE NUMBER
BCF29
BCF30
MARKING CODE
C7p
C8p
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
1
Top view
2
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_CM
P_tot
h_FE
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
BCF29
BCF30
f_T
transition frequency
CONDITIONS
open emitter
open base
T_amb ≤ 25 °C
I_C = −2 mA; V_CE = −5 V
I_C = −10 mA; V_CE = −5 V; f = 100 MHz
MIN.
−
−
−
−
MAX.
−32
−32
−200
250
UNIT
V
V
mA
mW
120
260
215
500
100
−
MHz
1997 May 22
2