BAT74V Datasheet, PDF (4/8 Pages) NXP Semiconductors – Schottky barrier double diode

Philips Semiconductors
Schottky barrier double diode
GRAPHICAL DATA
handboo¹k,⁰h³alfpage
IF
(mA)
10 ²
(1) (2) (3)
MSA892
10
(1) (2) (3)
1
10 ¹
0
0.4
(1) T_amb = 125 °C.
(2) T_amb = 85 °C.
(3) T_amb = 25 °C.
0.8
1.2
VF (V)
Fig.2 Forward current as a function of forward
voltage; typical values.
15
handbook, halfpage
Cd
(pF)
10
MSA891
5
Product specification
BAT74V
10 ³
IR
(µA)
10 ²
10
MSA893
(1)
(2)
1
(3)
10 ¹
0
10
20 _{VR (V)} 30
(1) T_amb = 125 °C.
(2) T_amb = 85 °C.
(3) T_amb = 25 °C.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
0
0
10
20 _{VR (V)} 30
f = 1 MHz; T_amb = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
2002 Sep 02
4