BAT74V Datasheet, PDF (2/8 Pages) NXP Semiconductors – Schottky barrier double diode

Philips Semiconductors
Schottky barrier double diode
Product specification
BAT74V
FEATURES
PINNING
• Low forward voltage
• Low capacitance
• Ultra small SMD plastic package
• Flat leads: excellent coplanarity and improved thermal
behaviour.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Line termination
• Inverse polarity protection.
PIN
DESCRIPTION
1
anode 1
2
not connected
3
cathode 2
4
anode 2
5
not connected
6
cathode 1
handbook, halfpage 6
5
4
6
4
DESCRIPTION
Planar Schottky barrier double diode with an integrated
guard ring for stress protection.
Two separate dies encapsulated in a SOT666 ultra small
SMD plastic package.
1
2
3
1
3
Top view
MAM461
Marking code: 74.
Fig.1 Simplified outline (SOT666) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_R
I_F
I_FRM
I_FSM
P_tot
T_stg
T_j
T_amb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
t_p ≤ 1 s; δ ≤ 0.5
t_p < 10 ms
T_amb ≤ 25 °C
MIN.
−
−
−
−
−65
−
−65
MAX.
30
200
300
600
230
+150
125
+125
UNIT
V
mA
mA
mA
mW
°C
°C
°C
2002 Sep 02
2