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| BAT74V Datasheet, PDF (3/8 Pages) NXP Semiconductors – Schottky barrier double diode | |||
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Philips Semiconductors
Schottky barrier double diode
Product speciï¬cation
BAT74V
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
VF
continuous forward voltage
IR
reverse current
Cd
diode capacitance
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
CONDITIONS
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA; note 1; see Fig.2
VR = 25 V; note 1; see Fig.3
VR = 1 V; f = 1 MHz; see Fig.4
MAX.
240
320
400
500
800
2
10
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Refer to SOT666 standard mounting conditions.
CONDITIONS
note 1
Soldering
The only recommended soldering method is reflow soldering.
VALUE
416
UNIT
mV
mV
mV
mV
mV
µA
pF
UNIT
K/W
2002 Sep 02
3
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