BAS86 Datasheet, PDF (4/6 Pages) NXP Semiconductors – Schottky barrier diode

Philips Semiconductors
Schottky barrier diode
GRAPHICAL DATA
handbook², ⁵h⁰alfpage
IF(AV)
(mA)
200
150
100
50
0
0
50
MRA540
100
150
Tamb (^oC)
Fig.2 Derating curve.
Product specification
BAS86
handboo¹k,⁰h³alfpage
IF
(mA)
10 ²
(1) (2) (3)
MSA892
10
(1) (2) (3)
1
10 ¹
0
0.4
0.8
1.2
VF (V)
(1) T_amb = 125 °C.
(2) T_amb = 85 °C.
(3) T_amb = 25 °C.
Fig.3 Forward current as a function of forward
voltage; typical values.
hand_Ib_Roo¹k,⁰h⁵alfpage
(nA)
10
4
10 ³
10 ²
MGC686
(1)
(2)
10
1
10 ^−1
0
(3)
10
20
30
40
50
VR (V)
(1) T_amb = 85 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.4 Reverse current as a function of reverse
voltage; typical values.
1996 Oct 01
12
handbook, halfpage
Cd
(pF)
8
MGC687
4
0
0
10
20
30
40
50
VR (V)
f = 1 MHz.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
4