BAS86 Datasheet, PDF (2/6 Pages) NXP Semiconductors – Schottky barrier diode

Philips Semiconductors
Schottky barrier diode
Product specification
BAS86
FEATURES
• Low forward voltage
• High breakdown voltage
• Guard ring protected
• Hermetically-sealed small SMD
package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode with an
integrated protection ring against
static discharges.
This surface mounted diode is
encapsulated in a hermetically sealed
SOD80C glass SMD package with
tin-plated metal discs at each end. It
is suitable for “automatic placement”
and as such it can withstand
immersion soldering.
handbook, halfpage
k
a
MAM190
Cathode indicated by a grey band.
Fig.1 Simplified outline (SOD80C), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_R
I_F
I_F(AV)
I_FRM
I_FSM
T_stg
T_j
T_amb
continuous reverse voltage
continuous forward current
average forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
see Fig.2
t_p ≤ 1 sec.; δ ≤ 0.5
t_p = 10 ms
MIN.
−
−
−
−
−65
−
−65
MAX.
50
200
200
500
5
+150
125
+125
UNIT
V
mA
mA
mA
A
°C
°C
°C
1996 Oct 01
2