 English |
|
|
|
|
|
|
|
| BAS86 Datasheet, PDF (3/6 Pages) NXP Semiconductors – Schottky barrier diode | |||
| |||
| ◁ |
Philips Semiconductors
Schottky barrier diode
Product speciï¬cation
BAS86
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
trr
reverse recovery time
Cd
diode capacitance
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
CONDITIONS
see Fig.3
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
VR = 40 V; see Fig.4; note 1
when switched from IF = 10 mA to IR = 10 mA;
RL = 100 â¦; measured at IR = 1 mA; see Fig.6
f = 1 MHz; VR = 1 V; see Fig.5
MAX. UNIT
300
mV
380
mV
450
mV
600
mV
900
mV
5
µA
4
ns
8
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SOD80 standard mounting conditions.
CONDITIONS
VALUE
320
UNIT
K/W
1996 Oct 01
3
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese