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74HC1G32 Datasheet, PDF (4/16 Pages) NXP Semiconductors – 2-input OR gate
Philips Semiconductors
2-input OR gate
Product specification
74HC1G32; 74HCT1G32
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC
VI
VO
Tamb
supply voltage
input voltage
output voltage
operating ambient
temperature
tr, tf
input rise and fall
times
CONDITIONS
see DC and AC
characteristics per
device
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
74HC1G
74HCT1G
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
2.0 5.0 6.0 4.5 5.0 5.5 V
0
−
VCC 0
−
VCC V
0
−
VCC 0
−
VCC V
−40 +25 +125 −40 +25 +125 °C
−
−
1000 −
−
−
ns
−
−
500 −
−
500 ns
−
−
400 −
−
−
ns
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V);
notes 1 and 2.
SYMBOL
VCC
IIK
IOK
IO
ICC
Tstg
PD
PARAMETER
supply voltage
input diode current
output diode current
output source or sink current
VCC or GND current
storage temperature
power dissipation per package
CONDITIONS
MIN.
−0.5
VI < −0.5 V or VI > VCC + 0.5 V
−
VO < −0.5 V or VO > VCC + 0.5 V
−
−0.5 V < VO < VCC + 0.5 V
−
−
−65
for temperature range from −40 to +125 °C; −
note 3
MAX. UNIT
+7.0 V
±20 mA
±20 mA
±12.5 mA
±25 mA
+150 °C
200 mW
Notes
1. Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and
functional operation of the device at these or any other conditions beyond those under ‘recommended operating
conditions’ is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device
reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
3. Above 55 °C the value of PD derates linearly with 2.5 mW/K.
2002 May 15
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