74HC1G32 Datasheet, PDF (2/16 Pages) NXP Semiconductors – 2-input OR gate

Philips Semiconductors
2-input OR gate
Product specification
74HC1G32; 74HCT1G32
FEATURES
• Wide operating voltage from 2.0 to 6.0 V
• Symmetrical output impedance
• High noise immunity
• Low power dissipation
• Balanced propagation delays
• Very small 5 pins package
• Output capability: standard.
DESCRIPTION
The 74HC1G/HCT1G32 is a highspeed Si-gate CMOS
device.
The 74HC1G/HCT1G32 provides the 2-input OR function.
The standard output currents are ¹/₂ compared to the
74HC/HCT32.
QUICK REFERENCE DATA
GND = 0 V; T_amb = 25 °C; t_r = t_f ≤ 6.0 ns.
SYMBOL
PARAMETER
CONDITIONS
t_PHL/t_PLH
C_I
C_PD
propagation delay A and B to Y
input capacitance
power dissipation capacitance
C_L = 15 pF; V_CC = 5 V
notes 1 and 2
Notes
1. C_PD is used to determine the dynamic power dissipation (P_D in µW).
P_D = C_PD × V_CC2 × f_i + (C_L × V_CC2 × f_o) where:
f_i = input frequency in MHz;
f_o = output frequency in MHz;
C_L = output load capacitance in pF;
V_CC = supply voltage in Volts.
2. For HC1G the conditions is V_I = GND to V_CC.
For HCT1G the conditions is V_I = GND to V_CC − 1.5 V.
TYPICAL
HC1G
8
1.5
19
HCT1G
10
1.5
20
UNIT
ns
pF
pF
FUNCTION TABLE
See note 1.
INPUTS
A
B
L
L
L
H
H
L
H
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
OUTPUT
Y
L
H
H
H
2002 May 15
2