TDA8591J Datasheet, PDF (30/36 Pages) NXP Semiconductors – 4 X 44 W into 4 or 4 X 75 W into 2 quad BTL car radio power amplifier

Philips Semiconductors
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
14.8 PCB design advice
Preliminary specification
TDA8591J
handbook, full pagewidth
VP
8 to 18 V
2200 µF
GND
47
47
kΩ
kΩ
(16 V)
220 nF ⁽¹⁾
220 nF ⁽²⁾
3.3
nF
DIAG
(6)
(7)
PCB SGND
(4)
(5)
100 µF
(6.3 V)
220 nF
IN1
220 nF
IN 2
220 nF
IN 3
220 nF
IN 4
1 13 15
20
6
2
22
10
12
16
18
14
7 4 21 24 27
8
3
5
9
TDA8591J
11
19
17
25
23
26
15
2.2 µF
kΩ (6.3 V)
(3)
(8) _{22 nF}
22 nF
22 nF
22 nF
22 nF
22 nF
22 nF
R
R
R
R
2
kΩ
2
kΩ
22 nF
(9) _{C =} 0.22
R
OUT1−
OUT1+
OUT2 +
OUT2 −
OUT3 +
OUT3 −
OUT4 +
OUT4 −
MGW456
(1) Power supply high frequency capacitor to be mounted close to the IC. An SMD component is recommended.
(2) Charge pump capacitor to be mounted close to the IC between pins 14 and 7.
(3) Switch closed is the mute mode.
(4) Switch open is the standby mode.
(5) A 3.3 nF capacitor has been added to provide a smooth offset detection diagnostic.
(6) Diagnostic output is less than 0.8 V when DDD or temperature pre-warning or protection circuits are activated.
(7) Signal ground switch is closed if the source is floating. Avoid ground loops in the input signal path. Keep inputs and signal ground close together.
(8) The 22 nF capacitors on the outputs can be replaced by the capacitor on the connector block to ground, where it is often used for RF immunity and
ESD suppression.
(9) Offset detection: if R = 100 kΩ then C = 2.2 nF; if R = 220 kΩ then C = 1 µF. An electrolytic capacitor is not allowed because of the random phase
of the DC offset.
Fig.37 PCB design advice.
2002 Jan 14
30