TDA8591J Datasheet, PDF (16/36 Pages) NXP Semiconductors – 4 X 44 W into 4 or 4 X 75 W into 2 quad BTL car radio power amplifier

Philips Semiconductors
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
Preliminary specification
TDA8591J
12 AC CHARACTERISTICS
V_P = V_P1 = V_P2 = V_P3 = 14.4 V; R_L = 4 Ω; f = 1 kHz; T_amb = 25 ^oC; measured in the circuit of Fig.29; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
P_o
G_v
THD + N
α_cs
∆G_v
V_n(o)
V_o(mute)
SVRR
Z_i
CMRR
B_P
f_ro(l)
f_ro(h)
output power
THD + N = 0.5 %
R_L = 4 Ω
20
22
−
W
R_L = 2 Ω
−
34
−
W
THD + N = 1 %; R_L = 2 Ω −
35
−
W
THD + N = 10 %
R_L = 4 Ω
R_L = 2 Ω
27
28
−
W
−
47
−
W
EIAJ values
R_L = 4 Ω
R_L = 2 Ω
41.5 44
W
−
75
−
W
voltage gain
total harmonic distortion plus
noise
channel separation
channel unbalance
V_i = 40 mV (RMS)
25
P_o = 1 W; f = 1 kHz
−
P_o = 10 W; f = 10 kHz
−
V_i = 40 mV (RMS); R_s = 0 Ω 56
−
26
27
dB
0.03 0.1
%
0.2
−
%
68
−
dB
−
1
dB
noise output voltage
R_s = 0 Ω; note 1
operating mode
−
70
110
µV
mute mode
−
16
−
µV
output voltage in mute mode mute mode; V_i = 1 V (RMS) −
16
30
µV
supply voltage ripple rejection V_ripple = 2 V (p-p); mute or 54
68
−
dB
operating mode; R_s = 0 Ω
input impedance
V_i ≤ 3 V (RMS)
60
70
−
kΩ
common mode rejection ratio
R_s = 0 Ω;
V_cm = 0.35 V (RMS)
−
70
−
dB
power bandwidth
THD + N = 0.5%; P_o = −1 dB −
20 to −
Hz
with respect to 17 W
20 000
low frequency roll-off
at −1 dB; note 2
−
25
−
Hz
high frequency roll-off
at −1 dB
150
300
−
kHz
Notes
1. The noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz.
2. The frequency response is fixed with external components.
2002 Jan 14
16