PSMN020-150W Datasheet, PDF (3/4 Pages) NXP Semiconductors – TrenchMOS transistor

Philips Semiconductors
TrenchMOS™ transistor
Objective specification
PSMN020-150W
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-247
α
SOT429
E
P
q
S
A
A1
β
R
D
Y
L1⁽¹⁾
b2
L
1
2
b
b1
e
e
3
wM
Q
c
0
10 20 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1 b2 c
DE
e
L L1 P Q
q
RS
wY
α
β
mm ^{5.3 1.9 1.2 2.2 3.2 0.9}
4.7 1.7 0.9 1.8 2.8 0.6
21
20
16
15
5.45
16
15
4.0
3.6
3.7
3.3
2.6
2.4
5.3
3.5
3.3
7.5
7.1
0.4
15.7
15.3
6°
4°
17°
13°
Note
1. Terminals are uncontrolled within zone L1.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
SOT429
TO-247
97-06-11
Fig.1. SOT429; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT429 envelope.
3. Epoxy meets UL94 V0 at 1/8".
February 1999
3
Rev 1.000