PSMN020-150W Datasheet, PDF (2/4 Pages) NXP Semiconductors – TrenchMOS transistor

Philips Semiconductors
TrenchMOS™ transistor
Objective specification
PSMN020-150W
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
in free air
TYP.
-
45
MAX.
0.5
-
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS
T_j= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_(BR)DSS
V_GS(TO)
R_DS(ON)
I_GSS
I_DSS
Q_g(tot)
Q_gs
Q_gd
t_{d on}
t_r
t_{d off}
t_f
L_d
L_d
L_s
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
V_GS = 0 V; I_D = 0.25 mA;
V_DS = V_GS; I_D = 1 mA
V_GS = 10 V; I_D = 25 A
V_GS = ±10 V; V_DS = 0 V
V_DS = 150 V; V_GS = 0 V;
T_j = -55˚C
T_j = 175˚C
T_j = -55˚C
T_j = 175˚C
T_j = 175˚C
I_D = 73 A; V_DD = 120 V; V_GS = 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
V_DD = 75 V; R_D = 3 Ω;
V_GS = 10 V; R_G = 5 Ω
Resistive load
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured from tab to centre of die
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
C_iss
Input capacitance
C_oss
Output capacitance
C_rss
Feedback capacitance
V_GS = 0 V; V_DS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
150 -
-
V
133 -
-
V
2.0 3.0 4.0 V
1.0 -
-
V
-
- 4.4 V
- 18 20 mΩ
-
- 57 mΩ
-
2 100 nA
- 0.05 10 µA
-
- 500 µA
- 164 - nC
- 30 - nC
- 77 - nC
- 50 - ns
- 114 - ns
- 214 - ns
- 114 - ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- 6429 7000 pF
- 785 810 pF
- 435 500 pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T_j = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I_S
Continuous source current
(body diode)
I_SM
Pulsed source current (body
diode)
V_SD
Diode forward voltage
I_F = 25 A; V_GS = 0 V
I_F = 75 A; V_GS = 0 V
t_rr
Reverse recovery time
I_F = 20 A; -dI_F/dt = 100 A/µs;
Q_rr
Reverse recovery charge V_GS = 0 V; V_R = 30 V
MIN. TYP. MAX. UNIT
-
- 73 A
-
- 290 A
- 0.85 1.2 V
- 1.1 -
V
- 200 - ns
- 1.5 - µC
February 1999
2
Rev 1.000