 English |
|
|
|
|
|
|
|
| PSMN004-25B Datasheet, PDF (3/9 Pages) NXP Semiconductors – N-channel logic level TrenchMOS transistor | |||
| |||
| ◁ |
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS⢠transistor PSMN004-25B, PSMN004-25P
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS
Continuous source current
(body diode)
ISM
Pulsed source current (body
diode)
VSD
Diode forward voltage
IF = 25 A; VGS = 0 V
IF = 75 A; VGS = 0 V
trr
Reverse recovery time
IF = 20 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge VGS = 0 V; VR = 25 V
MIN. TYP. MAX. UNIT
-
- 75 A
-
- 240 A
- 0.85 1.2 V
- 1.1 -
- 400 - ns
-
1
- µC
October 1999
3
Rev 1.100
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese