BUK563-80B Datasheet, PDF (3/7 Pages) NXP Semiconductors – PowerMOS Transistor Logic level FET

Philips Semiconductors
PowerMOS Transistor
Logic level FET
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_mb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_mb); conditions: V_GS ≥ 5 V
ID / A
100
10
RDS(ON) ^{= VDS/ID}
DC
1
BUK553-80B
tp = 10 us
100 us
1 ms
10 ms
100 ms
0.1
1
10
100
VDS / V
1000
Fig.3. Safe operating area. T_mb = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Product specification
BUK563-80B
Zth j-mb / (K/W)
1E+01
ZTHX53
1E+00 0.5
0.2
0.1
1E-01 ^0.05
0.02
P_D
tp
D = ^tp
T
0
1E-02
1E-07
1E-05
1E-03
t/s
T
t
1E-01
1E+01
Fig.4. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
ID / A
50
VGS / V =
10
7
40
30
BUK5y3-80B
5
20
4
10
3
0
0
2
4
6
8
10
VDS / V
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON) / Ohm
0.5
2.5 3 3.5 4
0.4
4.5
BUK5y3-80B
5
0.3
VGS / V =
0.2
7
0.1
10
0
0
Fig.6.
20
40
ID / A
Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
February 1996
3
Rev 1.000