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| BUK563-80B Datasheet, PDF (2/7 Pages) NXP Semiconductors – PowerMOS Transistor Logic level FET | |||
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Philips Semiconductors
PowerMOS Transistor
Logic level FET
Product specification
BUK563-80B
STATIC CHARACTERISTICS
Tj = 25 ËC unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 1 mA
VDS = 80 V; VGS = 0 V; Tj = 25 ËC
VDS = 80 V; VGS = 0 V; Tj =125 ËC
VGS = ±15 V; VDS = 0 V
VGS = 5 V; ID = 8 A
MIN. TYP. MAX. UNIT
80
-
-
V
1.0 1.5 2.0 V
-
1
10 µA
-
0.1 1.0 mA
-
10 100 nA
- 0.13 0.155 â¦
DYNAMIC CHARACTERISTICS
Tj = 25 ËC unless otherwise specified
SYMBOL PARAMETER
gfs
Forward transconductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
td on
Turn-on delay time
tr
Turn-on rise time
td off
Turn-off delay time
tf
Turn-off fall time
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25 V; ID = 8 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 3 A;
VGS = 5 V; RGS = 50 â¦;
Rgen = 50 â¦
Measured from upper edge of drain
tab to centre of die
Measured from source lead solder
point to source bond pad
MIN.
6.5
-
-
-
-
-
-
-
-
-
TYP.
9.0
700
240
130
20
95
80
65
2.5
7.5
MAX.
-
825
350
160
30
120
110
85
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
-
current
IDRM
Pulsed reverse drain current -
VSD
Diode forward voltage
IF = 16 A ; VGS = 0 V
trr
Reverse recovery time
IF = 16 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 30 V
MIN. TYP. MAX. UNIT
-
-
16
A
-
-
64
A
-
1.3 1.7 V
- 120 -
ns
- 0.15 -
µC
AVALANCHE LIMITING VALUE
SYMBOL
WDSS
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 16 A ; VDD ⤠40 V ;
Tmb = 25 ËC; VGS = 5 V ; RGS = 50 â¦
MIN.
-
TYP. MAX. UNIT
-
45 mJ
February 1996
2
Rev 1.000
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