BUK136-50L Datasheet, PDF (3/7 Pages) NXP Semiconductors – Logic level TOPFET SMD version of BUK125-50L

Philips Semiconductors
Logic level TOPFET
SMD version of BUK125-50L
Product specification
BUK136-50L
THERMAL CHARACTERISTIC
SYMBOL PARAMETER
Thermal resistance
R_{th j-mb}
Junction to mounting base
CONDITIONS
-
MIN. TYP. MAX. UNIT
- 0.94 1.17 K/W
OUTPUT CHARACTERISTICS
Limits are for -40˚C ≤ T_mb ≤ 150˚C; typicals are for T_mb = 25˚C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
MIN.
Off-state
V_IS = 0 V
V_(CL)DSS Drain-source clamping voltage I_D = 10 mA
50
I_DM = 5 A; tp ≤ 300 µs; δ ≤ 0.01
50
I_DSS
Drain source leakage current¹ V_PS = 0 V; V_DS = 40 V
-
T_mb = 25˚C
-
On-state
t_p ≤ 300 µs; δ ≤ 0.01; V_PS ≥ 4 V
R_DS(ON)
Drain-source resistance
I_DM = 15 A; V_IS ≥ 4.4 V
-
T_mb = 25˚C
-
TYP.
-
60
-
0.1
-
15
MAX. UNIT
70
V
70
V
100 µA
10 µA
40 mΩ
20 mΩ
INPUT CHARACTERISTICS
Limits are for -40˚C ≤ T_mb ≤ 150˚C; typicals are for T_mb = 25˚C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
MIN.
Normal operation
V_IS(TO)
I_IS
V_(CL)IS
R_IG
I_ISL
Input threshold voltage²
I_D = 1 mA
0.6
T_mb = 25˚C 1.1
Input current
V_IS = 5 V
-
Input clamping voltage
I_I = 1 mA
5.5
Internal series resistance³
to gate of power MOSFET
-
Overload protection latched V_PS ≥ 4 V
Input current
V_IS = 5 V
1
TYP.
-
1.6
16
6.4
1.7
2.7
MAX. UNIT
2.6 V
2.1 V
100 µA
8.5 V
-
kΩ
4 mA
1 The drain current required for open circuit load detection is switched off when there is no protection supply, in order to ensure a low off-state
quiescent current. Refer to OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS.
2 The measurement method is simplified if V_PS = 0 V, in order to distinguish I_D from I_DSP. Refer to OPEN CIRCUIT LOAD DETECTION
CHARACTERISTICS.
3 This is not a directly measurable parameter.
July 2002
3
Rev 1.000