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| BUK100-50DL Datasheet, PDF (3/10 Pages) NXP Semiconductors – PowerMOS transistor Logic level TOPFET | |||
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Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK100-50DL
THERMAL CHARACTERISTICS
SYMBOL PARAMETER
Thermal resistance
Rth j-mb
Rth j-a
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
MIN. TYP. MAX. UNIT
-
2.5 3.1 K/W
-
60
- K/W
STATIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(CL)DSS
V(CL)DSS
IDSS
IDSS
IDSS
RDS(ON)
Drain-source clamping voltage VIS = 0 V; ID = 10 mA
Drain-source clamping voltage
Zero input voltage drain current
Zero input voltage drain current
Zero input voltage drain current
Drain-source on-state
resistance1
VIS = 0 V; IDM = 1 A; tp ⤠300 µs;
δ ⤠0.01
VDS = 12 V; VIS = 0 V
VDS = 50 V; VIS = 0 V
VDS = 40 V; VIS = 0 V; Tj = 125 ËC
VIS = 5 V; IDM = 7.5 A; tp ⤠300 µs;
δ ⤠0.01
MIN.
50
-
TYP.
-
-
MAX.
-
70
UNIT
V
V
-
0.5 10 µA
-
1
20 µA
-
10 100 µA
-
85 125 mâ¦
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Short circuit load protection2 Tmb = 25 ËC; L ⤠10 µH; RL = 10 mâ¦
EDS(TO)
Overload threshold energy
VDD = 13 V; VIS = 5 V
-
0.2
-
J
td sc
ID(SC)
Response time
Drain current3
VDD = 13 V; VIS = 5 V
VDD = 13 V; VIS = 5 V
-
0.8
-
ms
-
25
-
A
IDM(SC)
Peak drain current4
VIS = 5 V; VDD = 13 V
-
60
-
A
Tj(TO)
Over temperature protection
Threshold junction temperature VIS = 5 V; from ID ⥠1 A5
150 -
-
ËC
TRANSFER CHARACTERISTIC
Tmb = 25 ËC
SYMBOL PARAMETER
gfs
Forward transconductance
CONDITIONS
VDS = 10 V; IDM = 7.5 A tp ⤠300 µs;
δ ⤠0.01
MIN. TYP. MAX. UNIT
5
9
-
S
1 Continuous input voltage. The specified pulse width is for the drain current.
2 Refer to OVERLOAD PROTECTION LIMITING VALUES.
3 Continuous drain-source supply voltage. Pulsed input voltage.
4 Continuous input voltage. Momentary short circuit load connection. (The higher peak current is due to the effect of capacitance Cgd).
5 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum ID
ensures this condition.
November 1996
3
Rev 1.200
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