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| PHP45N03LT Datasheet, PDF (2/8 Pages) NXP Semiconductors – TrenchMOS transistor Logic level FET | |||
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Philips Semiconductors
TrenchMOS⢠transistor
Logic level FET
Product specification
PHP45N03LT
STATIC CHARACTERISTICS
Tj= 25ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
VGS = 0 V; ID = 0.25 mA;
Tj = -55ËC
VDS = VGS; ID = 1 mA
Tj = 175ËC
Tj = -55ËC
VDS = 30 V; VGS = 0 V;
Tj = 175ËC
VGS = ±5 V; VDS = 0 V
VGS = 5 V; ID = 25 A
VGS = 10 V; ID = 25 A
VGS = 5 V; ID = 25 A; Tj = 175ËC
MIN.
30
27
1
0.5
-
-
-
-
-
-
-
TYP.
-
-
1.5
-
-
0.05
-
10
20
16
-
MAX.
-
-
2
-
2.3
10
500
100
24
21
45
UNIT
V
V
V
V
µA
µA
nA
mâ¦
mâ¦
mâ¦
DYNAMIC CHARACTERISTICS
Tj = 25ËC unless otherwise specified
SYMBOL PARAMETER
gfs
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td on
tr
td off
tf
Ld
Forward transconductance
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25 V; ID = 25 A
ID = 40 A; VDD = 24 V; VGS = 5 V
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 15 V; ID = 25 A;
VGS = 5 V; RG = 5 â¦
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
8
-
-
-
-
-
-
-
-
-
-
-
TYP.
16
23
3
12
2000
380
250
30
80
95
40
3.5
MAX.
-
-
-
-
2500
450
300
45
130
135
55
-
UNIT
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
-
4.5
-
nH
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
current
IDRM
Pulsed reverse drain current
VSD
Diode forward voltage
IF = 25 A; VGS = 0 V
IF = 40 A; VGS = 0 V
trr
Reverse recovery time
IF = 40 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = -10 V; VR = 25 V
MIN. TYP. MAX. UNIT
-
-
45
A
-
- 180 A
- 0.95 1.2 V
-
1.0
-
-
52
-
ns
- 0.08 -
µC
November 1997
2
Rev 1.200
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