PHP130N03LT Datasheet, PDF (2/6 Pages) NXP Semiconductors – TrenchMOS transistor Logic level FET

Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
PHP130N03LT, PHB130N03LT
ESD LIMITING VALUE
SYMBOL PARAMETER
V_C
Electrostatic discharge
capacitor voltage, all pins
CONDITIONS
Human body model (100 pF, 1.5 kΩ)
MIN.
-
MAX.
2
UNIT
kV
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN. TYP. MAX. UNIT
-
- 0.8 K/W
SOT78 package, in free air
- 60 - K/W
SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
ELECTRICAL CHARACTERISTICS
T_j= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_(BR)DSS
V_(BR)GSS
V_GS(TO)
R_DS(ON)
g_fs
I_GSS
I_DSS
Q_g(tot)
Q_gs
Q_gd
t_{d on}
t_r
t_{d off}
t_f
L_d
L_d
L_s
Drain-source breakdown
voltage
Gate-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate-source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
V_GS = 0 V; I_D = 0.25 mA;
I_G = 1 mA
T_j = -55˚C
V_DS = V_GS; I_D = 1 mA
T_j = 175˚C
T_j = -55˚C
V_GS = 5 V; I_D = 25 A
V_GS = 10 V; I_D = 25 A
V_GS = 5 V; I_D = 25 A; T_j = 175˚C
V_DS = 25 V; I_D = 25 A
V_GS = ±5 V; V_DS = 0 V;
T_j = 175˚C
V_DS = 30 V; V_GS = 0 V;
T_j = 175˚C
I_D = 75 A; V_DD = 24 V; V_GS = 5 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
V_DD = 15 V; I_D = 25 A;
V_GS = 5 V; R_G = 5 Ω
Resistive load
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
C_iss
Input capacitance
C_oss
Output capacitance
C_rss
Feedback capacitance
V_GS = 0 V; V_DS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
30 -
27 -
10 -
-
V
-
V
-
V
1 1.5 2
V
0.5 -
-
V
-
- 2.3 V
-
5
6 mΩ
- 4.5 5 mΩ
-
- 11 mΩ
20 40
-
S
- 0.02 1 µA
-
- 10 µA
- 0.05 10 µA
-
- 500 µA
- 92 - nC
- 10 - nC
- 36 - nC
- 45 60 ns
- 120 170 ns
- 225 300 ns
- 100 135 ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- 5000 - pF
- 1150 - pF
- 500 - pF
January 1998
2
Rev 1.300